(China (Mainland))
Product Summary
The VP1008B is a P-Channel enhancement-mode MOSFET transistor. The applications of the device include: (1)Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.; (2)Battery Operated Systems; (3)Power Supply, Converter Circuits; (4)Motor Control.
Parametrics
VP1008B absolute maximum ratings: (1)Drain-Source Voltage, VDS: -100V; (2)Gate-Source Voltage, VGS: ±20v; (3)Continuous Drain Current, ID: -0.79A at TA=25℃; -0.53 at TA=100℃; (4)Pulsed Drain Currenta, IDM: –3 A; (5)Power Dissipation, PD: 6.25w at TA=25℃; 2.5w at TA=100℃; (6)Maximum Junction-to-Case, RthJC: 20℃/w; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150 ℃.
Features
VP1008B features: (1)High-Side Switching; (2)Low On-Resistance: 2.5Ω; (3)Moderate Threshold: –3.4 V; (4)Fast Switching Speed: 40 ns; (5)Low Input Capacitance: 75 pF.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
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 VP1008B |
Vishay/Siliconix |
MOSFET 100V 5 OHM |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||
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VP1008B |
Vishay/Siliconix |
MOSFET 100V 5 OHM |
Data Sheet |
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VP1008CSM4 |
Other |
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Data Sheet |
Negotiable |
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VP1008L |
Vishay/Siliconix |
MOSFET 100V 5 OHM |
Data Sheet |
Negotiable |
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VP1008M |
Other |
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Data Sheet |
Negotiable |
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VP101 |
Other |
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Data Sheet |
Negotiable |
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VP1058 |
Other |
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Data Sheet |
Negotiable |
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