Product Summary

The M24C02BN6 is I2C-compatible electrically erasable programmable memory (EEPROM) device. This device is organized as 256 x 8. When writing data to the memory, the M24C02BN6 inserts an acknowledge bit during the 9th bit time, following the bus master’ 8-bit transmission.When data is read by the bus master, the bus master acknowledges the receipt of the data byte in the same way. Data transfers of the M24C02BN6 are terminated by a Stop condition after an Ack for Write, and after a NoAck for Read.

Parametrics

M24C02BN6 absolute maximum ratings:(1)Storage Temperature, TSTG: –65 to 150℃; (2)Lead Temperature during Soldering See note, TLEAD: 1℃; (3)Input or Output range, VIO: –0.50 to 6.5V; (4)Supply Voltage, VCC: –0.50 to 6.5V; (5)Electrostatic Discharge Voltage (Human Body model), VESD: –4000 to 4000V.

Features

M24C02BN6 features: (1)Two Wire I2C Serial Interface; (2)Supports 400kHz Protocol; (3)Packages– ECOPACK(RoHS compliant); (4)Write Control Input; (5)BYTE and PAGE WRITE (up to 16 Bytes); (6)RANDOM and SEQUENTIAL READ Modes; (7)Self-Timed Programming Cycle; (8)Automatic Address Incrementing; (9)Enhanced ESD/Latch-Up Behavior; (10)More than 1 Million Erase/Write Cycles; (11)More than 40 Year Data Retention.

Diagrams

M24C02BN6 Logic diagram

M24C01
M24C01

Other


Data Sheet

Negotiable 
M24C01-BN6
M24C01-BN6

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Data Sheet

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M24C01-MN3T
M24C01-MN3T

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Data Sheet

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M24C01-MN6
M24C01-MN6

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Data Sheet

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M24C01-MN6T
M24C01-MN6T

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Data Sheet

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M24C01-RDS6G
M24C01-RDS6G

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Data Sheet

Negotiable