Product Summary

The APT10035LLLG is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFET. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT’s patented metal gate structure.

Parametrics

APT10035LLLG absolute maximum ratings: (1)Drain-Source Voltage: 1000V; (2)Continuous Drain Current: 28A; (3)Pulsed Drain Current: 112A; (4)Gate-Source Voltage Continuous: ±30V; (5)Gate-Source Voltage Transient: ±40V; (6)Total Power Dissipation: 690W; (7)Linear Derating Factor; (8)Operating and Storage Junction Temperature Range: -55 to 150℃.

Features

APT10035LLLG features: (1)Lower Input Capacitance; (2)Increased Power Dissipation; (3)Lower Miller Capacitance; (4)Easier To Drive; (5)Lower Gate Charge, Qg; (6)Popular T-MAX? or TO-264 Package.

Diagrams

APT10035LLLG block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT10035LLLG
APT10035LLLG

MOSFET N-CH 1000V 28A TO-264
Data Sheet
0-1: $19.00
1-25: $16.15
25-100: $14.96
100-250: $13.77
250-500: $13.06
500-1000: $12.35
1000-2500: $11.97
2500-5000: $11.64
5000-10000: $11.40
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT1001R1AN
APT1001R1AN
Other

Data Sheet
Negotiable 
APT1001R1AVR
APT1001R1AVR
Other

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APT1001R1BN
APT1001R1BN
Other

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APT1001R1BVFR
APT1001R1BVFR
Other

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APT1001R1HN
APT1001R1HN
Other

Data Sheet
Negotiable 
APT1001R1HVR
APT1001R1HVR
Other

Data Sheet
Negotiable