(China (Mainland))
Product Summary
The 2SC3585 R44 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 R44 features excellent power gain with very low-noise figures. The 2SC3585 R44 employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values.
Parametrics
2SC3585 R44 absolute maximum ratings: (1)Collector to Base Voltage:20 V; (2)Collector to Emitter Voltage:10 V; (3)Emitter to Base Voltage:1.5 V; (4)Collector Current:35 mA; (5)Total Power Dissipation:200 mW; (6)Junction Temperature:150℃; (7)Storage Temperature:-65 to +150℃.
Features
2SC3585 R44 features: (1)NF 1.8 dB TYP. @f = 2.0 GHz; (2)Ga 9 dB TYP. @f = 2.0 GHz.
Diagrams
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