Product Summary

The IRFF130 is a repetitive avalanche and dv/dt rated HEXFET transistor. The HEXFET technology of the IRFF130 is the key to International Rectifier advanced line of power MOSFET transistor. The efficient geometry and unique processing of this latest State of the Art design achieves very low on-state resistance combined with high transconductance. The HEXFET transistor IRFF130 also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

Parametrics

IRFF130 absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ±20 V; (2)EAS Single Pulse Avalanche Energy: 75 mJ; (3)dv/dt Peak Diode Recovery dv/dt: 5.5 V/ns; (4)TJ Operating Junction: -55 to 150℃; (5)TSTG Storage Temperature Range: -55 to 150℃; (6)Continuous Drain Current: 5.0A; (7)IDM Pulsed Drain Current: 32A.

Features

IRFF130 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.

Diagrams

IRFF130 Switching Time Test Circuit

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IRFF130
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