Product Summary
The AO4484 is an N-Channel Enhancement Mode Field Effect Transistor. The AO4484 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. The AO4484 is electrically identical.
Parametrics
AO4484 absolute maximum ratings: (1)Repetitive avalanche energy, EAR: 79mJ; (2)Pulsed Drain Current, ID: 13.5A; (3)Avalanche Current, IAR: 23A; (4)Continuous Drain Current, ID: 3.5A; (5)Power Dissipation, PD: 3.1W; (6)Junction and Storage Temperature Range, Tj, Tstg: -55 to 150℃; (7)Gate-Source Voltage, VGS: ±20V; (8)Drain-Source Voltage, VDS: 40V.
Features
AO4484 features: (1)VDS (V) = 40V; (2)ID = 10A (VGS = 10V); (3)RDS(ON) < 10mΩ (VGS = 10V); (4)RDS(ON) < 12mΩ (VGS = 4.5V).
Diagrams
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![]() AO4484 |
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![]() MOSFET N-CH 40V 13.5A 8-SOIC |
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![]() AO4401 |
![]() Other |
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![]() Negotiable |
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![]() AO4402 |
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![]() MOSFET N-CH 20V 20A 8SOIC |
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![]() AO4403 |
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![]() MOSFET P-CH -30V -6.1A 8-SOIC |
![]() Data Sheet |
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![]() AO4404 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() AO4404B |
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![]() MOSFET N-CH 30V 8.5A 8-SOIC |
![]() Data Sheet |
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![]() AO4405 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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