(China (Mainland))
Product Summary
The 2N4858 is a leaded JFET for general purpose.
Parametrics
2N4858 maixmum ratings: (1)drain-source voltage, VDS: 40v; (2)drain-gate voltage, VDG: 40v; (3)reverse gate-source voltage, VGSR: -40v; (4)forward gate current, IGF: 50mAdc; (5)tatal device dissipation at TA=25℃, PD: 360mW; derate above 25℃: 2.4 mW/℃; (6)storage temperature range, Tstg: -65 to 175℃.
Features
2N4858 off characteristics: (1)gate-source breakdown voltage(IG=1.0 uAdc, VDS=0), V(BR)GSS: -40v min; (2)gate reverse current, IGSS: 0.25nAdc max at VGS=-20vdc, VDS=0; 0.5 uAdc max at VGS=-20vdc, VDS=0, TA=150℃; (3)gate source cutoff voltage, VGSoff: -0.8 to -4.0Vdc; (4)drain cutoff current, IDoff: 0.25 nAdc max at VDS=15VDC, VGS=-10vdc; 0.5uAdc max at VDS=15VDC, VGS=-10vdc, A=150℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N4858A |
Central Semiconductor |
JFET Leaded JFET General Purpose |
Data Sheet |
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2N4858A-E3 |
Vishay/Siliconix |
JFET 40V 5pA |
Data Sheet |
Negotiable |
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2N4858JAN |
Other |
|
Data Sheet |
Negotiable |
|
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2N4858JANTX |
Other |
|
Data Sheet |
Negotiable |
|
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2N4858JANTXV |
Other |
|
Data Sheet |
Negotiable |
|
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2N4858 |
Other |
|
Data Sheet |
Negotiable |
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