1N5712

Schottky diode, High Breakdown Voltage, 70 V, 250 mW, DO

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Price:: US $0.07~0.09 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10 :	0.09 / Piece
50 ~ 500 :	0.07 / Piece
1000 ~ 2000 :	0.07 / Piece

PartNumber:: 1N5712

Brand:: M/A-COM Technology Solutions Inc. - MACOM | Pack: DO | D/C: 11+

Availability:: Supply Ability: 1/Year Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2012-12-23

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Part Number:1N5712
US $0.07 - 0.09
Quantity:

piece

Product Summary

The 1N5712 is a passivated Schottky barrier diode which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

Parametrics

1N5712 absolute maximum ratings: (1)Junction Operating and Storage Temperature Range: -65℃ to +200℃; (2)DC Power Dissipation: 250 mW; (3)Peak Inverse Voltage: VBR.

Features

1N5712 features: (1)Low Turn-On Voltage As Low as 0.34 V at 1 mA; (2)Pico Second Switching Speed; (3)High Breakdown Voltage Up to 70 V; (4)Matched Characteristics Available.