Product Summary

The HY57V561620FTP-H is a DRAM Memory suited for advaced-consumer application which use the batteries such as Image displayer application (Digital still camera etc.) and portable applications (portable multimedia player and portable audio player). Also, the HY57V561620FTP-H is used high-speed consumer applications. Short for Hynix Synchronous DRAM, a type of DRAM that can run at much higher clock speeds memory. The HY57V561620FTP-H is ideally suited for the consumer memory applications which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304 x 16 I/O.

Parametrics

HY57V561620FTP-H absolute maximum ratings: (1)Ambient Temperature, TA: 0 to 70℃; (2)Storage Temperature, TSTG: -55 to 125℃; (3)Voltage on Any Pin relative to VSS, VIN, VOUT: -1.0 to 4.6 V; (4)Voltage on VDD supply relative to VSS, VDD, VDDQ: -1.0 to 4.6 V; (5)Short Circuit Output Current, IOS: 50 mA; (6)Power Dissipation, PD: 1W.

Features

HY57V561620FTP-H features: (1)Standard SDRAM Protocol; (2)Internal 4bank operation; (3)Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V; (4)All device pins are compatible with LVTTL interface; (5)Low Voltage interface to reduce I/O power; (6)8,192 Refresh cycles / 64ms; (7)Programmable CAS latency of 2 or 3; (8)Programmable Burst Length and Burst Type: - 1, 2, 4, 8 or full page for Sequential Burst; - 1, 2, 4 or 8 for Interleave Burst; (9)0 to 70℃ Operation.

Diagrams

HY57V561620FTP-H functional block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
HY57V561620FTP-H
HY57V561620FTP-H
Other

Data Sheet
Negotiable 
HY57V561620FTP-H-C
HY57V561620FTP-H-C
Other

Data Sheet
Negotiable