(China (Mainland))
Product Summary
The HM621100ALJP-20 is a high speed 1M Static RAM organized as 1048576-word × 1-bit. It realizes high speed access time (20/25/35 ns) and low power consumption, employing CMOS process technology and high speed circuit designing technology. The HM621100ALJP-20 is most advantageous for the field where high speed and high density memory is required, such as the cache memory for main frame or 32-bit MPU. The HM621100ALJP-20, packaged in a 400-mil plastic SOJ is available for high density mounting.
Parametrics
HM621100ALJP-20 absolute maximum ratings: (1)Voltage on any pin relative to VSS, Vin: –0.5 to +7.0 V; (2)Power dissipation, PT: 1.0 W; (3)Operating temperature range, Topr: 0 to +70℃; (4)Storage temperature range, Tstg: –55 to +125℃; (5)Storage temperature range under bias, Tbias: –10 to +85℃.
Features
HM621100ALJP-20 features: (1)Single 5 V supply and high density 28-pin package (DIP and SOJ); (2)High speed Access time: 20/25/35 ns (max); (3)Low power dissipation: Active mode: 350 mW (typ); Standby mode: 100 μW (typ); (4)Completely static memory required No clock or timing strobe required; (5)Equal access and cycle time; (6)Directly TTL compatible All inputs and outputs.
Diagrams
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