Product Summary

The HM621100ALJP-20 is a high speed 1M Static RAM organized as 1048576-word × 1-bit. It realizes high speed access time (20/25/35 ns) and low power consumption, employing CMOS process technology and high speed circuit designing technology. The HM621100ALJP-20 is most advantageous for the field where high speed and high density memory is required, such as the cache memory for main frame or 32-bit MPU. The HM621100ALJP-20, packaged in a 400-mil plastic SOJ is available for high density mounting.

Parametrics

HM621100ALJP-20 absolute maximum ratings: (1)Voltage on any pin relative to VSS, Vin: –0.5 to +7.0 V; (2)Power dissipation, PT: 1.0 W; (3)Operating temperature range, Topr: 0 to +70℃; (4)Storage temperature range, Tstg: –55 to +125℃; (5)Storage temperature range under bias, Tbias: –10 to +85℃.

Features

HM621100ALJP-20 features: (1)Single 5 V supply and high density 28-pin package (DIP and SOJ); (2)High speed Access time: 20/25/35 ns (max); (3)Low power dissipation: Active mode: 350 mW (typ); Standby mode: 100 μW (typ); (4)Completely static memory required No clock or timing strobe required; (5)Equal access and cycle time; (6)Directly TTL compatible All inputs and outputs.

Diagrams

HM621100ALJP-20 block diagram

HM6207H
HM6207H

Other


Data Sheet

Negotiable 
HM6208H
HM6208H

Other


Data Sheet

Negotiable 
HM621100A
HM621100A

Other


Data Sheet

Negotiable 
HM621400H
HM621400H

Other


Data Sheet

Negotiable 
HM621400HC
HM621400HC

Other


Data Sheet

Negotiable 
HM6216255H
HM6216255H

Other


Data Sheet

Negotiable