(China (Mainland))
Product Summary
The DE275-102N06A is a RF Power MOSFET. It is ideal for Class C, D, & E Applications.
Parametrics
DE275-102N06A absolute maximum ratings: (1)VDSS: 1000 V; (2)VDGR: 1000 V; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 8 A; (6)IDM: 48 A; (7)IAR: 6 A; (8)EAR: 20 mJ; (9)dv/dt: 5 V/ns.
Features
DE275-102N06A features: (1) Isolated Substrate; (2)IXYS advanced low Qg process; (3)Low gate charge and capacitances; (4)Low RDS(on); (5)Very low insertion inductance (<2nH); (6)No beryllium oxide (BeO) or other hazardous materials.
Diagrams
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 DE275-501N16A |
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DE275X2-102N06A |
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DE275X2-501N16A |
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Negotiable |
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