Product Summary

The 3N165 is a monolithic dual p-channel enhancement mode mosfet.

Parametrics

3N165 absolute maximum ratings: (1)Transient G-S Voltage: ±125 V; (2)Gate-Gate Voltage: ±80 V; (3)Drain Current: 50 mA; (4)Storage Temperature: -65℃ to +200℃; (5)Operating Temperature: -55℃ to +150℃; (6)Lead Temperature (Soldering, 10 sec.): +300℃; (7)Power Dissipation (One Side): 300 mW; (8)Total Derating above 25℃: 4.2 mW/℃.

Features

3N165 feature: (1)Very high input impedance; (2)High gate breakdown; (3)Ultra low leakage; (4)Low capacitance.

Diagrams

3N165 Device Schematic

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3N165
3N165

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Image Part No Mfg Description Data Sheet Download Pricing
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3N165
3N165

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3N166
3N166

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Data Sheet

0-105: $13.28
105-200: $12.78
200-500: $12.28
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Data Sheet

0-105: $13.28
105-200: $12.78
200-500: $12.28
3N164
3N164

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MOSFET 30V 3mA 375mW

Data Sheet

0-105: $13.28
105-200: $12.78
200-500: $12.28
3N163-E3
3N163-E3

Vishay/Siliconix

MOSFET 40V 5mA 375mW

Data Sheet

0-1: $16.19
1-25: $14.56
25-50: $13.86
50-100: $13.28