Product Summary

The 3N165 is a monolithic dual p-channel enhancement mode mosfet.

Parametrics

3N165 absolute maximum ratings: (1)Transient G-S Voltage: ±125 V; (2)Gate-Gate Voltage: ±80 V; (3)Drain Current: 50 mA; (4)Storage Temperature: -65℃ to +200℃; (5)Operating Temperature: -55℃ to +150℃; (6)Lead Temperature (Soldering, 10 sec.): +300℃; (7)Power Dissipation (One Side): 300 mW; (8)Total Derating above 25℃: 4.2 mW/℃.

Features

3N165 feature: (1)Very high input impedance; (2)High gate breakdown; (3)Ultra low leakage; (4)Low capacitance.

Diagrams

3N165 Device Schematic

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
3N165
3N165
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
3N163
3N163
Vishay/Siliconix
MOSFET 40V 5mA 375mW
Data Sheet
0-105: $13.28
105-200: $12.78
200-500: $12.28
3N163-E3
3N163-E3
Vishay/Siliconix
MOSFET 40V 5mA 375mW
Data Sheet
0-1: $16.19
1-25: $14.56
25-50: $13.86
50-100: $13.28
3N164
3N164
Vishay/Siliconix
MOSFET 30V 3mA 375mW
Data Sheet
0-105: $13.28
105-200: $12.78
200-500: $12.28
3N164-E3
3N164-E3
Vishay/Siliconix
MOSFET 30V 3mA 375mW
Data Sheet
0-105: $13.28
105-200: $12.78
200-500: $12.28
3N165
3N165
Other

Data Sheet
Negotiable 
3N166
3N166
Other

Data Sheet
Negotiable