(China (Mainland))
Product Summary
The SMJ4256-15JDS is a high-speed, 262,144-bit dynamic random-access memory, organized as 262,144 words of one bit each. It employs state-of-the-art SMOS N-channel double-level ploysilicon/polycide gate technology for very high performance combined with low cost and improved reliability. Typical power dissipation is as low as 300mW operating and 12.5 mW standby.
Parametrics
SMJ4256-15JDS absolute maximum ratings: (1)voltage range: -1V to 7V; (2)short circuit output current: 50mA; (3)power dissipation: 1W; (4)minimum operating free-air temperature: -55℃; (5)operating case temperature: 110℃; (6)storage temperature range: -65 to 150℃.
Features
SMJ4256-15JDS features: (1)single 5v supply; (2)JEDEC standardized pinout; (3)long refresh period; (4)low refresh overheas time; (5)on-chip substrate bias generator; (6)all inputs, outputs and clocks fully TTL compatible; (7)low power dissipation; (8)3-state unlatched output.
Diagrams
