(China (Mainland))
Product Summary
The 2SC5826TV2R is a Power transistor. It is suitable for Low frequency amplifier and High speed switching.
Parametrics
2SC5826TV2R absolute maximum ratings: (1)Collector-base voltage, VCBO: 60V; (2)Collector-emitter voltage, VCEO: 60V; (3)Emitter-base voltage, VEBO: 6V; (4)Collector current, IC: 3A; (5)Power dissipation, PC: 1.0W; (6)Junction temperature, Tj: 150℃; (7)Range of storage temperature, Tstg: -55 to 150℃.
Features
2SC5826TV2R features: (1)High speed switching (Tf: Typ: 30ns at IC = 3A); (2)Low saturation voltage, typically (Typ: 200mV at IC = 2A, IB = 0.2mA); (3)Strong discharge power for inductive load and capacitance load; (4)Complements the 2SA2073.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SC5826TV2R |
ROHM Semiconductor |
Transistors Bipolar (BJT) TRANS GP BJT NPN 60V 3A 3PIN ATV |
Data Sheet |
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